Gallium oxide-based deep UV photodetectors for space applications

Optoelectronics is a crucial technology that converts and controls electrical and light energy using semiconductor devices. The newer generation of Ultraviolet optoelectronics devices based on ultrawideband gap materials are radiation resilient and, therefore, suitable for deep space applications, particularly UV astronomy and optical communications. A key challenge is understanding the ultra-high responsivity and ultra-slow response time exhibited by GoX compared to Si. Such an understanding helps engineer the device structures and realise commercial GoX-based detectors for space applications.

This project aims to introduce a step-change in developing and applying novel deep UV photodetector fabrication and testing methods in collaboration with the National Physical Laboratory (NPL), London. The PhD student will perform basic materials characterisation, design and fabricate detectors at Cardiff, and further develop and apply novel device testing approaches at NPL, where the student will spend 1/3rd of their time. There is flexibility to work at NPL sites in London or Swansea.

If the student decides to be based in London, the funder will provide an additional London allowance for the time spent at the NPL site.